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| SMD Type Power Transistor 2SD2444K SOT-23 Transistors IC Unit: mm IC = 1A. +0.1 2.4-0.1 Low saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature * Single pulse Pw=100ms. Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 15 15 6 1 0.2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50iA IC=1mA IE=50iA VCB=12V VEB=5V Testconditons Min 15 15 6 0.5 0.5 0.3 180 200 15 390 MHz pF Typ Max Unit V V V iA iA V VCE(sat) IC/IB=400mA/20mA hFE fT Cob VCE=2V, IC=50mA VCE=2V, IE= -50mA, f=100MHz VCB=10V, IE=0, f=1MHz hFE Classification Marking hFE BSR 180 390 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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